Modeling of disordered semiconductor of GST225 structure
Keywords:
disordered semiconductors, phase memory, chalcogenide glass-like semiconductor, material properties control, alloying, nano-dimensional films, nano-electronics, quantum mechanical modelingAbstract
Numerical modeling of unalloyed and alloyed GST225 structure in amorphous and crystalline states is carried out. The most probable locations of alloying impurities in the structure are revealed. 3D models of a super-cell of the disordered semiconductor are constructed. Influence of N, Si, and O alloying impurities is investigated.References
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